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M30L40C
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Vishay General Semiconductor
Revision: 20-Nov-12
2
Document Number: 89012
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ?
40 ms
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 -
Forward Current Derating Curve
Fig. 2 -
Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
TYP. MAX.
UNIT
Instantaneous forward voltage per diode VF
(1)
IF
= 8 A
= 15 A 0.490 0.55
TJ
= 25 °C
0.430 -
V
IF
IF
= 30 A 0.595 -
IF
= 8 A
= 15 A 0.413 0.48
TJ
= 125 °C
0.331 -
IF
IF
= 30 A 0.572 -
Reverse current per diode IR
(2)
VR
= 40 V
TJ
= 25 °C 88 360 μA
TJ
= 100 °C 12 45 mA
Typical junction capacitance per diode CJ
4.0 V, 1 MHz 750 - pF
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
M30L40C
UNIT
Typical thermal resistance per diode R?JC
2.0 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
M30L40C-E3/4W 2.068 4W 50/tube Tube
A
v
erage For
w
ard C
u
rrent (A)
Case Temperature (°C)
30
35
25
20
15
10
5
0
0 25 50 75 100 125 150
Resistive or Inductive Load
0
02468
10 12 14 16 18
1
2
3
4
5
6
7
8
9
A
v
erage Po
w
er Loss (W)
Average Forward Current (A)
D = 0.2D = 0.5
D = 0.1
D = 0.3D = 0.8
D = 1.0
D = tp/T tp
T
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